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Based on volume experience and compatibility know-how, Infineon introduces the revolutionary CoolSiC™ MOSFET technology which enables radically new product designs. In comparison to traditional Silicon based switches like IGBTs and MOSFETs, the Silicon Carbide (SiC) MOSFET offers a series of advantages. CoolSiC™ MOSFET products in 1700 V, 1200 V and 650 V target photovoltaic inverters, battery charging. energy storage, motor drives, UPS, auxiliary power supplies and SMPS. Silicon Carbide CoolSiC™ MOSFET represents the best performance, reliability and ease of use for system designers. Silicon Carbide (SiC) opens up new degrees of flexibility for designers to harness never before seen levels of efficiency and reliability.
Enhancing new materials to offer customers extended levels of performance
CoolSiC™ MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in SiC switches, no reverse recovery losses of the anti-parallel diode, temperature independent low switching losses, and threshold-free on-state characteristics.
Infineon’s unique CoolSiC™ MOSFET adds additional advantages. Superior gate oxide reliability enabled by state-of-the-art trench design, best in class switching and conduction losses, highest transconductance level (gain), threshold voltage of Vth = 4V and short-circuit robustness. This is the revolution you can rely on.
All this results in a robust Silicon Carbide MOSFET, ideal for hard- and resonant-switching topologies like LLC and ZVS, which can be driven like an IGBT or MOSFET with easy to use drivers. Delivering the highest level efficiency at high switching frequencies allowing for system size reduction, power density increases and high lifetime reliability.
TO-247-4pin package contains an additional connection to the source (Kelvin connection) that is used as a reference potential for the gate driving voltage, thereby eliminating the effect of voltage drops over the source inductance. The result is even lower switching losses than for TO247-3pin version, especially at higher currents and higher switching frequencies. CoolSiC™ MOSFET Easy modules offer a very good thermal interface, a low stray inductance and robust design as well as PressFIT connections. While low power ranges can be ideally addressed with the Easy family, medium power inverters of 250+ kW can best make use of the 62mm package. The HybridPACK™ Drive CoolSiC™ MOSFETs are AQG-324 qualified and optimized for high power automotive traction inverters of 180+ kW. It is an easy-to-mount SixPack module for direct water cooling with pin-fin baseplate and supports an efficient and high-volume-optimized assembly process.
650 V, 1200 V, and 1700 V CoolSiC™ MOSFET discretes ideally suited for hard- and resonant-switching topologies
Our CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both lowest losses in the application and highest reliability in operation. The discrete CoolSiC™ portfolio in TO- and SMD-housings comes in 650 V, 1200 V and 1700 V voltages classes, with on-resistance ratings from 27 mΩ up to 1000 mΩ. CoolSiC™ trench technology enables a flexible parameter-set, which is used for implementation of application-specific features in respective product portfolios, e.g.: gate-source voltages, avalanche specification, short-circuit capability or internal body diode rated for hard commutation.
CoolSiC™ MOSFETs in discrete packages are ideally suited for both hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters. An excellent immunity against unwanted parasitic turn-on effects creates a benchmark in low dynamic loss, even at zero volt turn-off voltage in bridge topologies. Our TO- and SMD offering comes also with Kelvin-source pins for optimized switching performance.
We complete the SiC discrete offering with a range of selected driver IC products fulfilling the needs of the ultrafast SiC MOSFET switching feature. Together, CoolSiC™ MOSFETs and EiceDRIVER™ gate driver ICs leverage the advantage of SiC technology: improved efficiency, space and weight savings, part count reduction, enhanced system reliability.
CoolSiC™ Silicon Carbide MOSFET module technology in different packages and topologies
Power modules with CoolSiC™ MOSFET open up new opportunities for inverter designers to realize never before seen levels of efficiency and power density. In addition, Silicon Carbide (SiC) is tailoring to application needs by different available topologies from 45 mOhm to 2 mOhm RDS(on).
Available in different configurations such as 3-level, dual, fourpack, sixpack or as booster, our 1200V SiC MOSFET modules offer a superior gate oxide reliability enabled by state-of-the-art trench design, best in class switching and conduction losses.
Not only, can all EasyPACK™, EasyDUAL™, and 62mm CoolSiC™ MOSFET power modules be ordered with pre-applied Thermal Interface Material (TIM) , but additional features can be offered as well. For example Easy modules with a high-performance aluminum nitride (AlN) ceramic, that significantly improves the thermal performance of RthJH.
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