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Digitalization around the world is fueling the adoption of wireless communication technologies such as cellular 4G/5G, WiFi, and Ultra-Wide-Band (UWB) and the demand for RF products in diverse industries and applications. Empowered by our RF expertise and leading SiGe BiCMOS, RF bulk Si and RF SOI CMOS technologies, Infineon offers high performing, energy efficient, and green RF solutions to a new era of RF complexity and technological challenges.
Our comprehensive RF chip portfolio is highly customer driven. We continuously focus on developing our system understanding to deliver highest RF technology products for reliable wireless connectivity. Therefore, at Infineon we aim to boost user experience by supporting devices to achieve higher data rates, better quality signal, and longer battery lifetime.
In our increasingly connected world, the demand of a seamless wireless communication is a top priority for devices to succeed in the market. RF products are considered building blocks that help to improve the performance of various applications featuring wireless communication systems such as cellular 4G/5G, WIFI, GPS / GNSS, and UWB. With Infineon RF solutions, we help our customers maximize user experience while overcoming stringent industry challenges such as limiting form factors and other RF technical requirements.
The target applications for our RF solutions are continuously expanding from consumer devices such as, smartphones, laptops, tablets, wearables, drones, access points (routers, customer premises equipment / CPE), and various smart home appliances.
The internet of things (IoT) is one the most exciting market trends nowadays. One of the effects of the IoT is extensive interconnectedness between objects to the internet. As a leading RF chip maker with strong focus on system understanding, Infineon provides RF solutions to support customers into taking their devices to the next level along this digital transformation journey.
Furthermore, the latest generation of mobile communication technology 5G has become a reality. One of the key market drivers of the 5G deployment are mobile devices namely smartphones, tablets, wearables, and other devices. 5G devices are enabled with enhanced communication features thanks to the extended capabilities of 5G cellular networks. Our extensive RF expertise in this market allows us to support our customers with 5G RF chips and deliver various system benefits including faster data rates, wider frequency coverage, more power efficiency, and higher system robustness.
Enabling best antenna efficiency with Infineon antenna centric solutions (antenna tuners, cross switches and coupler)
In the increasingly connected world, modern smart devices must cover a wide frequency range while antennas have to be minimized in dimensions. This affects antenna performance in terms of radiated power and receive sensitivity.
Infineon antenna centric solutions help maximize antenna efficiency which translates into enhanced user experience in terms of higher data rates, longer battery life, and improved signal quality. Our antenna devices, including antenna tuners, cross switches, and the coupler IC, help to address antenna design challenges while enabling optimum power transfer and control for highest antenna efficiency. With Infineon’s growing product portfolio of antenna centric solutions, our team of experts is constantly looking for ways to further enhance overall antenna performance and radiation efficiency.
Antenna tuners for improved antenna efficiency
In smart connected devices, an antenna should be able to perform well in several frequency bands. Hence, there is a growing need to tune antennas according to the required frequency band of operation. This can be done by applying antenna tuning which improves overall antenna radiation efficiency.
Antenna tuning can be performed in two ways. Aperture tuning improves antenna efficiency by shifting the natural resonance of an antenna to the required frequency band of operation. Impedance tuning helps optimize signal transmission to the antenna by compensating frequency and environmental effects. Infineon offers a comprehensive portfolio of antenna tuning switches to address antenna design challenges and enable maximum power transfer for best antenna efficiency.
At Infineon, we are always looking toward the future trends that enable new technologies. Therefore, all Infineon antenna tuners are 5G ready!
Cross switches for antenna swapping
Antenna cross switches enable the switching between antennas to select the best performing antenna for optimizing transmit power for an Up-Link (UL) or improved receive sensitivity for a Down-Link (DL). Effective antenna swap capabilities require high-quality cross switching products that enable quick and efficient switching between antennas. Infineon has developed a series of antenna cross switches to enable antenna swapping functions for various antenna architectures.
Coupler for RF calibration and power control
Infineon bi-directional coupler is used as a part of power control and antenna tuning loops. Cellular RF front-ends incorporate bi-directional couplers in the main transmitted path to sense RF power propagating in a particular direction (transmitted or reflected back from the antenna). Based on the output of the coupler, dynamic PA control, and antenna tuning is performed.
Highest RF design flexibility and performance with cost-efficient RF switches for IoT and 5G applications
Digitalization is transforming the global landscape, with wireless communication technologies enhancing connectivity like never before. Most, if not all, industries are benefiting from the faster communication of information supported by radio frequency (RF) technologies such as cellular 4G/5G, WiFi, and Ultra-Wide-Band (UWB). As these communication systems evolve, mobile devices need to operate under challenging environments created by the exposure to an increasing number of frequency bands.
RF switches are widely used for band selection and frequency signal switching between various RF input / output ports. Therefore these components support high quality signal and strength in various applications.
As a leading RF switch manufacturer, Infineon offers an extensive portfolio of RF switch ICs for wireless communication systems, such as cellular 4G / 5G. Our product portfolio is continuously evolving and it provides high performance RF switches that meet stringent technical requirements such as RF power or fast switching speed at reduced supply voltages.
RF switch products
Infineon’s RF switches portfolio includes components with very low Insertion Loss (IL), high isolation (ISO), and low harmonics generation. RF switches are used for band selection and antenna switching of different RF paths within the RF Front-End (RF FE) providing several system benefits such as higher design flexibility, cost, and power savings.
Within our portfolio, we offer high power RF switches that perfectly match technical requirements of electronic devices such as mobile phones featuring cellular communication (4G / 5G). Within this RF switch category, our components provide high power handling capabilities of up to +37dBm and offer ultra-high linearity performance. Here you will find some of our best-selling components such as, high power SPDT RF Switch BGS12P2L6 GPIO controlled and our high power SP4T BGS14MPA9 with MIPI control interface.
As mobile data download is continuously increasing, devices require a higher bandwidth and an additional receiver channel called the diversity path. To select the right receive band, one option is to use a diversity switch with low IL and excellent RF performance. In our RF switch portfolio for the diversity path, you will find various components with excellent IL and value-added features such as cross functionality (see BGSX44MA12, BGSX210MA18 and BGSX212MA18). Furthermore, we offer devices with fast switching speed such as BGS12WN6 and BGS14WMA9, GPIO and MIPI controlled respectively. Likewise, take a closer look at our SP3T and SPDT RF Switch offerings for multi-purpose with very competitive RF performance.
RF switch designs
Infineon RF switches are easy to design in since we offer very small and compact integrated circuits (ICs) in very robust packages. This makes them a perfect choice for surface mount on PCBs (Printed Circuit Boards). The RF switch portfolio has variety in size and RF performance. Therefore, you will likely find a solution meeting your application requirements. Our target applications include various consumer devices such as, smartphones, laptops, tablets, wearables, drones, access points (routers, customer premises equipment / CPE), and various smart home appliances.
Boost the data-rate and reception quality of your wireless application with Infineon’s low noise amplifiers
Low Noise Amplifier LNA ICs subcategories
A low noise amplifier (LNA) amplifies a very low-power signal without significantly degrading its signal-to-noise ratio. When regular amplifiers amplify signals, additional noise is often introduced to the system. However, by using an electronic LNA, this noise can be significantly reduced.
Infineon’s range of low noise amplifier ICs improve receiver sensitivity and thereby achieve the ultimate user experience. Our portfolio of MMIC RF LNAs is continuously updated to satisfy the ever-changing market requirements with custom made products for each application. Highly integrated in the smallest package, our LNA MMICs come with ESD protection and low power consumption, ideal for battery-operated mobile devices. What’s more, our innovative SiGe technology delivers lower noise than silicon alternatives and performance comparable to more expensive GaAs counterparts.
Profiting with all the aforementioned advantages of our LNA MMICs, you will increase the system sensitivity tremendously, and the users of your 4G/5G, GPS, Mobile TV, Wi-Fi, and FM portable devices will enjoy features such as high data-rate reception, fast and precise navigation, and smooth high-quality streaming even in the worst reception conditions e.g. dense cities, underground, indoors, etc.
To learn more about the Infineon range of Low Noise Amplifier ICs, explore our complete product portfolio.
Low Noise Amplifier product benefits
Infineon’s extensive portfolio of LNA MMICs offer high gain and an ultra-low noise figure. This allows frontend losses to be significantly improved and increases data rate. Infineon has developed a comprehensive product range low noise amplifier ICs, that include gain step LNAs and multi-state LNAs to improve 4G/5G system sensitivity.
To develop this technology, our R&D experts set themselves the target of reducing the gap between Gamma Opt point (location of optimum source impedance for minimum noise figure) at 5-6GHz and 50Ω to boost RF receiver sensitivity. This allows customers to quickly design systems supporting input matching without requiring any external matching components.
Benefits include a low noise figure (less than 1dB at 5-6GHz at application level and 0.75dB NFmin at transistor level), best power gain (around 15dB) at application level, and 22dB maximum power gain at application level, reduced BOM, smaller PCB footprint, and best linearity at lower supply voltages. Robustness against ESD and high input power thanks to integrated ESD protection at the input and output.
Low Noise Amplifier LNAs designs
4G/5G, Wifi/WLAN and UWB applications
When it comes to 4G/5G, Wifi/WLAN and UWB applications, Infineon offers a range of low noise amplifier ICs that allow easy implementation into RF design. Infineon LNAs are used in many customized solutions as well as referenced by many chipset vendors.
Portable devices
Infineon offers a range of GPS/GLONASS/COMPASS (GNSS) LNAs that are ideal for portable devices such as smart phones and tablets. The low noise amplifier IC range offers best-in-class for the categories noise figures, linearity, and form factor.
Enable a compact RF frontend design of 4G / 5G devices with Infineon’s Switch LNA modules
Infineon Switch LNA Modules (LMM / low noise amplifier – multiplexer module) offer a price- and size-effective integrated solution to improve the reception sensitivity of LTE / 5G devices such as smartphones. With its integrated RF switch, it selects one of multiple frequency bands to be amplified by the integrated LNA. These integrated solutions help to achieve high data rates and strong connectivity as other Infineon discrete components with the benefit that they are smaller in sum and considerably more cost-efficient.
Infineon’s high performance SiGe (Silicon Germanium) LNA technology allows best Noise-Figure (NF) and linearity at low power consumption.
Infineon Antenna Switch Modules (ASM) are designed to support feature and smart-phones as well as other wireless devices. The ASM combines the individual receive- and transmit paths of individual frequency bands of one or more antennas for GSM, EDGE, UMTS, CDMA and LTE. Integrated GSM Tx filters minimize the transmission of unwanted harmonic signals.
Infineon Antenna Switch Modules (ASM) are designed to support multi-band cellular phones and other devices. The ASM combines the individual receive- and transmit paths of individual frequency bands of one or more antennas for GSM, EDGE, UMTS, CDMA and LTE. For GSM integrated filters minimize the transmission of unwanted harmonic signals.
The ASMs use Infineon bulk CMOS RF switch technology, proven in high volume at multiple factories, and different implementations of harmonic filters including an inhouse passive integration technology.
RF Transistor subcategories
For over a decade, Infineon Technologies has paved the way and set market standards in all radio frequency segments.
Since market entry in 1973, Infineon RF transistors have set the scene in low frequency (up to 5GHz) and medium frequency applications (up to 14GHz) by being adopted in a vast range of segments.
The broad portfolio of Low Noise Amplifiers (LNA) includes devices suitable for conventional RF applications, such as AM to VHF/UHF, therefore embracing low-end markets such as cable TV and tuners within the consumer space as well as emerging wireless applications within the industrial segment, where the system specification is not firmly established yet.
Adequate performance, highest versatility and large package offer including industry standard SOTs and leadless ultra-miniature TSLP and TSFP for space constraint designs, providing designers with many options and flexibility in design-in conception, ultimately reducing time to market.
The robustness and outstanding quality and reliability of Infineon RF transistors complement the offer while still having an attractive price.
RF Diode subcategories
All Infineon RF diodes come with best-in-class diode capacitance and low parasitic inductance thanks to advanced package miniaturization.
Competitive leadtimes, outstanding quality and reliability, secure supply and RF global field application engineering and sales team complement an unique product offering.
Wireless Control subcategories
Receiver, Transmitter and Transceiver ICs for the Sub 1 GHz Frequency Bands
Wireless Control has become an indispensable item of everyday’s life. Starting from routines like gate openers, window shutters and remote controls through metering and wireless fire-alarms to automotive applications like remote keyless entry and tire pressure monitoring systems, wireless control devices have established themselves as a cost-efficient and robust solution for a broad range of control applications.
Infineon has in development a complete family of packaged RF transceiver for mobile backhaul – beside BGT70 and BGT80 for E-band radio, also BGT60 for V-band radio.
The family approach has the major benefit due to it’s a modular approach – one architecture supporting the three backhaul frequency ranges of 60, 70 and 80 GHz. Customers can easily design all three radio versions with the same RF footprint as the package is same for all three transceiver.
Characteristics of different Base Station Sizes
| Base Station | Picocell | Microcell | Macrocell |
|---|---|---|---|
| Range | 10 – 200m | 200m – 2km | 1 – 30km |
| No. of users | 8 – 32 | 64+ | 200+ |
| Typical application | SMB, enterprise, public indoor areas | Metro outdoors, city centers, capacity hotspots | Outdoor coverage |
| Deployment scenario | Enterprise or operator deployed | Operator deployed | Operator deployed |
High reliability discrete solutions designed for demanding aerospace applications
High Reliability Discrete subcategories
Infineon Technologies is a leading supplier of discrete semiconductor devices for the worldwide space community. The product range of High Reliability (HiRel) products spans from microwave pin- and Schottky-diodes over a broad range of MW-transistors to radiation hard powerMOS transistors.
Contrary to the high-volume markets where low-cost plastic packages are used, Infineon semiconductor dies are assembled in hermetically sealed packages to create HiRel standard products for professional applications. It is important to note that high reliability components, including aerospace semiconductors take full advantage of the stabilized mass production of wafers for the consumer and commercial markets. The wafers are selected from the best controlled volume production and have to pass additional acceptance tests. Bare dies are also available from these specially approved and reserved wafers.
High Reliability Discrete product solutions
As a leading supplier of discrete semiconductor devices for the high reliability community, Infineon Technologies has an excellent reputation in space community for over 40 years. The device family includes radiation hard PowerMOS transistors, PIN- and schottky-diodes, and microwave transistors. Based on the unique Infineon CoolMOS™ technology the radiation hard PowerMOS transistors are a worldwide benchmark for 650V, 250V, 150V, and 60V devices in radiation hardness and electrical performance. The TID hardness is specified up to 100 krad (300 krad on request) and SEE was tested up to LET55 with Xe and LET84 with Au ions.
All HiRel devices, including aerospace semiconductors, are also available as qualified chip (bare die) from specially approved and reserved wafers. The high reliability components offer proven reliability and are ideally suited for space applications. Infineon HiRel components are supplied in different quality levels: “P” for professional level used in Engineering Modules (EM) and “ES” for ESA space level for Flight Modules (FM).
All Infineon high reliability components are from European production and therefore unclassified in terms of export regulations.
High Reliability Discrete designs
With over four decades of supplying the space community with outstanding reliability and state-of-the-art technology, Infineon’s extensive range of high reliability components are best suited for aerospace and space applications that require robust and rugged construction.
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