FRAM (Ferroelectric Random Access Memory or FeRAM) is a stand-alone nonvolatile memory that enables you to instantly capture and preserve critical data when power is interrupted. They are ideal for mission-critical data-logging applications like high-performance Programmable Logic Controllers (PLC) requiring high reliability control and throughput, or life-enhancing patient monitoring devices. Designed in a low-power, small footprint, F-RAMs offer instant non-volatility and virtually unlimited endurance without compromising on speed or energy-efficiency.
Density: 4Kb, 16Kb, 64Kb, 128Kb, 256Kb, 512Kb, 1Mb, 2Mb, 4Mb, 8Mb, 16Mb
Interface: I2C, SPI, QSPI, Parallel(X8, X16)
Infineon offers a comprehensive portfolio of serial and parallel F-RAM non-volatile memories. Our standard F-RAMs are available in densities ranging from 4kbit to 4Mbit. Excelon™ is Infineon’s next generation of FRAM memory. Excelon™ F-RAM delivers the industry’s lowest-power nonvolatile memory, by combining ultra-low-power operation with high-speed interfaces, instant nonvolatility and unlimited read/write cycle endurance making it the ideal data-logging memory for portable medical, wearable, IoT sensor, industrial and automotive applications. They are available in densities ranging from 2 Mbit to 16 Mbit and support 1.71V to 1.89V operating voltage range in addition to the wide-voltage 1.8V to 3.6V range.
Learn more about our high-density Excelon™ FRAM’s.
F-RAM memories are built on Ferroelectric technology. The F-RAM chip contains a thin ferroelectric film of lead zirconate titanate, commonly referred to as PZT. The atoms in the PZT change polarity in an electric field, thereby producing a power efficient binary switch. However, the most important aspect of the PZT is that it is not affected by power disruption, making F-RAM a reliable nonvolatile memory. The underlying operation principle of the F-RAM and its unique memory cell architecture imparts specific advantages that sets the technology apart from competing memory technologies like EEPROM or NOR Flash.
F-RAM products are among the industry’s lowest power nonvolatile memory solutions consuming much lesser active currents than competing EEPROM and MRAM solutions. This makes F-RAMs suitable for battery operated devices such as wearables and medical implants. Virtually unlimited endurance and instant non-volatility ensure that F-RAMs outperform existing memories like EEPROM and NOR Flash in several datalogging applications.
Feature | F-RAM | EEPROM | Toggle MRAM |
---|---|---|---|
Density | Medium-High | Low-Medium | Medium-High |
Performance | High | Low | High |
Power Consumption | Low | Medium-High | Medium-High |
Endurance | Virtually unlimited | Low | Unlimited |
Additional capacitor | No | Yes | No |
The most energy efficient, high density, reliable data logging memories
EXCELON™, Infineon’s next-generation Ferroelectric RAM (F-RAM) memory, delivers the industry’s lowest-power mission-critical nonvolatile memory, by combining ultra-low-power operation with high-speed interfaces, instant nonvolatility and unlimited read/write cycle endurance. This makes EXCELON™ the ideal data-logging memory for portable medical, wearable, IoT sensor, industrial and automotive applications.
Density: 2Mbit, 4Mbit, 8Mbit
Interface: SPI, QSPI
Key features
Infineon’s EXCELON™ F-RAM Family
EXCELON™ Ultra – High-Performance F-RAM for Industrial Automation
EXCELON™ Auto – High Reliability F-RAM for Automotive Event Data Recorder
EXCELON™ LP – Ultra-Low-Energy F-RAM for Portable Medical devices and Wearables
2Mbit to 16Mbit EXCELON™ F-RAM Family
Learn more about the ultra-low-energy family of serial F-RAMs that is the industry’s most energy efficient, high performance, high-reliability nonvolatile memory.
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