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The goal of the highest reliability and efficiency in a core technology is always a moving target; therefore we understand that continuous improvement is essential. As a market leader for power diodes and thyristors, we offer the core technology for power generation, transmission, supply, and control – on every continent in the world.
Our strongest wish is to make our customers successful in their markets. That is why we innovate, develop and manufacture the most advanced solutions for their systems: high-performance discs with highest power density and additional functions, thyristor/diode modules offering an attractive price-performance ratio, high efficient silicon or CoolSiC™ silicon carbide diodes in discrete housings as well as bare dies for the highest flexibility.
High-power diodes and thyristors are used to boost efficiency significantly in many applications. They have set standards in a power range from 10 kW to over 10 GW. Discrete silicon or silicon carbide (SiC) Schottky diodes aim for applications like server farms, solar plants orenergy storage systems. Qualified for both industrial and automotive applications.
Applied in many application with a power range of a few kilowatts up to several gig watts
Thyristor / Diode Discs subcategories
Our portfolio consists of standard thyristors and diodes with epoxy disc case, high power thyristors and diodes with ceramic disc case.
The light triggerable thyristors (LTT´s) are very compact in size and especially fast in reaction. Hence without high power thyristors high voltage DC couplers would not be reality today, when two grids can not be coupled by AC links.
Standard thyristors and diodes combinations in modular construction
Bipolar Power Semiconductors are applied in the most varied fields of application in a power range of just a few kilowatts up to several giga watts.
We offer our customers a broad range of power modules containing thyristors and diodes in voltage range of 1200 V to 4400 V and a current of 61 A up to 1070 A. The modules are designed and assembled in high reliable pressure contact and in solder bond technology which addresses the specific requirements of cost and performance optimized applications.
Our modules are offered in several dual and single device topologies for almost all phase control or rectifier applications. Application areas for our modules are e.g. Electrical Drives, as well as low voltage soft starters and general purpose power supplies.
Cost effective and fully integrated solution for overloads up to 5000 A
Our soft starter module family meets the market’s needs for cost effective and compact semiconductor solutions. With its new design, Power Start focusses on reducing complexity and number of components. It allows a broad range of current classes. This new feature enables straightforward integration of the module together with the bypass contactor into the typical design space.
Power Start provides an integrated heatsink and can be mounted easily and without having to use thermal grease. The module makes use of double sided cooling, thus it can withstand highest overload currents.
Bridge Rectifiers & AC Controller for a more compact converter design
We offer bridge rectifier modules in solder pin design like EasyBRIDGE or eupec™ EconoBRIDGE™ modules. The available configurations are fully- and half controlled rectifiers with brake IGBT and optional NTC resistor. They cover the current range from 25A up to 180A at 800V and 1600V. The eupec™ IsoPACK™ family with screwable load terminals are fully- , half- and uncontrolled rectifier modules. The three phase AC Switches complete the eupec™ IsoPACK™ product family. The current range covers 85A up to 205A at 1600 V.
Silicon Carbide CoolSiC™ Schottky Diode solutions – Improve efficiency and solution costs
Infineon is the world’s first Silicon Carbide (SiC) discrete power supplier. Long market presence and experience enable Infineon to deliver highly reliable, industry-leading SiC performance. The differences in material properties between Silicon Carbide and Silicon limit the fabrication of practical Silicon unipolar diodes (Schottky diodes) to a range up to 100 V–150 V, with relatively high on-state resistance and leakage current. In SiC material Schottky diodes can reach a much higher breakdown voltage. The Infineon portfolio of Silicon Carbide (SiC) products covers 600 V and 650 V to 1200 V Schottky diodes.
Perfect cost/performance balance, targeting high efficiency applications switching between 18kHz and 100kHz
The Silicon Power Rapid Diode family complements Infineon’s existing high power 600V/650V diode portfolio by filling the gap between SiC diodes and previously released emitter-controlled diodes. Rapid 1 and Rapid 2 diodes are optimized to have excellent compatibility with CoolMOS™ and high speed IGBT (Insulated Gate Bipolar Transistor) such as the TRENCHSTOP™ 5 and HighSpeed 3.
Infineon’s unique Fast Recovery Diode technology
The Ultrathin wafer and field-stop technology makes the Emitter Controlled-Diode ideally suited for consumer & industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled-Diode is optimized for Infineon IGBT technology.
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