Aerospace and defense platforms require reliable, secure and robust memory solutions capable of meeting strict performance and environmental metrices. These compute-intensive applications put increasing demands on memory performance and density to handle the large amounts of data sourced from multiple sensors and processor nodes.
Volatile Memory: Infineon’s radiation-hardened SRAM products provide industry-leading performance while adhering to the utmost standards for reliability. The Infineon Radiation-Hardened Quad Data Rate and Fast Asynchronous SRAM memories are the fastest space-qualified SRAM memories equipped with numerous features that are engineered to satisfy the needs of today’s advanced space systems and beyond.
Nonvolatile Memory: Infineon’s radiation-hardened nonvolatile memory products are the first serial-protocol-enabled nonvolatile memories for FPGA and processor boot code solutions. They serve a variety of state-of-the-art space-qualified, high-performance FPGAs as well as arm®-based microcontrollers. Industry leading endurance and data retention is delivered to our customers base.
Defense nvSRAMs: Infineon’s defense-grade memory products portfolio consists of the world’s most-reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. These products are designed and tested to withstand military operating temperature ranges and come in robust CERDIP packages.
256 Kb Defense Parallel nvSRAM | 1 Mb Defense Parallel nvSRAM | |
Density (Kb) | 256 | 1,024 |
Access Time (ns) | 35 | 35 |
Configurations | 32k x 8 | 128k x 8 |
Temperature Range (OC) | -55 to 125 | -55 to 125 |
Data Retention | 100 years | 100 years |
Max. Operating VCCQ (V) | 5.5 | 5.5 |
Min. Operating VCCQ (V) | 4.5 | 4.5 |
QML Certification Level | QML-Q | QML-Q |
Package | 32-pin ceramic DIP | 32-pin ceramic DIP |
Infineon offers the industry’s highest performance, most secure, low-pin-count serial NOR Flash and parallel NOR Flash memories. Our broad portfolio makes it easy to find the ideal solution for your embedded system or FPGA boot code solutions. The industry standard Quad SPI (Serial Peripheral Interface) interface is simple to use and is supported by virtually all modern chipsets. NOR Flash is the ideal memory for code storage in Embedded systems due to its fast random read performance. This performance also supports XIP (eXecute In Place) functionality which allows host controllers to execute code directly from the NOR Flash memory without needing to first copy to a RAM. Higher levels of serial NOR memory performance have enabled XIP to be used on a wide variety of designs in many applications/
Infineon offers the widest range of military-temperature qualified serial and parallel NOR Flash memories.
Infineon backs all of its products with world-class quality and support.
Serial NOR Flash | Parallel NOR Flash | |
Density | 64 Mb – 1 Gb | 64 Mb – 4 Gb |
Interface/Width | SPI / QSPI | x16 |
Max. Frequency | 133 MHz SDR / 66MHz DDR | 90-130 ns |
Package Types | FBGA, SOIC | FBGA, TSOP |
Temperature Range | Commercial, Industrial, Automotive, Military | Commercial, Industrial, Automotive, Military |
Infineon offers a complete range of high-density synchronous SRAM families, including QDR/DDR, I and II, No Bus Latency™ and standard pipelined and flow-through products. Infineon delivers the industry’s broadest portfolio of 65-nm synchronous SRAMs with speeds up to 1066 MHz. Infineon is also a market leader in the asynchronous SRAM market segment and offers the broadest portfolio of fast asynchronous and low-power asynchronous SRAM (MOBL™) devices.
Synchronous SRAM | Asynchronous SRAM | |
Density | 9 Mb – 144 Mb | 256 Kb – 64 Mb |
Width | x18, x36 | x8, x16, x32 |
Max. Frequency | 1066 MHz | 10 ns |
Package Types | BGA, FCBGA, TQFP | FBGA, BGA, TQFP, SOJ, TSOP |
Temperature Range | Commercial, Industrial, Automotive, Military | Commercial, Industrial, Automotive, Military |
Infineons’ nonvolatile SRAM (nvSRAM) integrates the company’s proprietary QuantumTrap™ nonvolatile elements into high-performance SRAM memory cells. The memory array is accessed the same way as a conventional SRAM, supporting standard system designs while adding the ability to retain data when power is lost.
Parallel nvSRAM | Serial, I2C, SPI, QSPI nvSRAM | |
Density | 16 Kb – 16 Mb | 16 Kb – 1 Mb |
Width | x18, x16, x32 | N/A |
Cycle Time | 20 – 45 ns | 1 – 104 MHz |
RTC | Yes | Yes |
Package Types | TSOP, FBGA, SSOP, SOIC, CERDIP | DFN, SOIC |
Temperature Range | Commercial, Industrial, Military | Commercial, Industrial |
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